Diameter Tuning of β $$ \beta $$ -Ga2O3 Nanowires Using Chemical Vapor Deposition Technique

Low-temperature growth of highly crystalline β-Ga2O3 nanowires by solid-source chemical vapor deposition

UNLABELLED Growing Ga2O3 dielectric materials at a moderately low temperature is important for the further development of high-mobility III-V semiconductor-based nanoelectronics. Here, β-Ga2O3 nanowires are successfully synthesized at a relatively low temperature of 610°C by solid-source chemical vapor deposition employing GaAs powders as the source material, which is in a distinct contrast to ...

Diameter Tuning of \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$ \beta $$\end{document}β-Ga2O3 Nanowires Using Chemical Vapor Deposition Technique

Diameter tuning of [Formula: see text]-Ga2O3 nanowires using chemical vapor deposition technique have been investigated under various experimental conditions. Diameter of root grown [Formula: see text]-Ga2O3 nanowires having monoclinic crystal structure is tuned by varying separation distance between metal source and substrate. Effect of gas flow rate and mixer ratio on the morphology and diame...

Growth of 3C-Silicon Carbide Nanowires using Chemical Vapor Deposition

The focus of this project was the characterization and growth of 3C-silicon carbide (b-SiC) nanowires using the vapor-liquid-solid method. Chemical vapor deposition (CVD) occurred at temperatures ranging from 1050oC to 1100oC using silane and propane as precursor gases. Experimentation with various surface preparations, including metal catalysts such as nickel (Ni) and aluminum (Al) deposited b...

Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition

Gallium assisted plasma enhanced chemical vapor deposition of silicon nanowires.

Silicon nanowires have been grown with gallium as catalyst by plasma enhanced chemical vapor deposition. The morphology and crystalline structure has been studied by electron microscopy and Raman spectroscopy as a function of growth temperature and catalyst thickness. We observe that the crystalline quality of the wires increases with the temperature at which they have been synthesized. The cry...